logo
logo

IBM’s storage memory breakthrough is 50 times faster than flash

avatar
Marc Anderson
May 18, 2016 10:43
img

In PCM cell, '0' is programmed to be written in the amorphous phase or a '1' in the crystalline phase, or vice versa while low voltage is applied to read the bits back as in re-writable Blue-ray Discs.

For storing 3 bits per cell, the scientists have developed a set of drift-immune cell-state metrics and drift-tolerant coding and detection schemes.

IBM Research - Zurich manager of non-volatile memory research and one of the authors of the paper Dr. Haris Pozidis said: "Phase change memory is the first instantiation of a universal memory with properties of both DRAM and flash, thus answering one of the grand challenges of our industry.

"Reaching 3 bits per cell is a significant milestone because at this density the cost of PCM will be significantly less than DRAM and closer to flash."

With the technology, scientists are expecting that a mobile phone's operating system could be stored in PCM, which will help it launch in a few seconds.

The technology could also be used in enterprise environments, as the entire databases could be stored in PCM, allowing faster query processing for time-critical online applications, such as financial transactions.

collect
0
avatar
Marc Anderson
May 18, 2016 10:43
guide
Zupyak is a free content platform for publishing and discovering stories, software and startups.