RF GaN Semiconductor Device Market Growth Overview
This report examines market trends, leading companies, supply chain trends, technological advancements, significant developments, and future strategies. RF GaN Semiconductor Device Market Growth statistics were compiled from a variety of primary and secondary sources. Sales revenue from all of the identified segments and sub-segments in the scope of the study are used to calculate market size. For data validation and accuracy checks, the market sizing analysis employs both top-down and bottom-up methodologies. The study's purchasers will also be subjected to a market positioning analysis, which will take into account factors such as target consumer, brand strategy, and pricing strategy. The analysis makes use of previous market data to estimate revenue.
The research report provides a comprehensive market assessment across key geographies such as North America, Europe, Asia Pacific, the Middle East, Latin America, and the Rest of the World. The report is useful for existing companies, prospective entrants, and potential investors. The most recent RF GaN Semiconductor Device analysis looks at global and regional market estimates and forecasts for all of the segments covered by the research scope. Other aspects of the industry, such as the supply chain, downstream buyers, and sourcing strategy, have been investigated in order to provide a thorough and in-depth understanding of the market.
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The research study includes profiles of leading companies operating in the global RF GaN Semiconductor Device Market.
Major Market Players
Sumitomo Electric Industries, Robert Bosch, Toshiba Corporation, Infineon Technologies, Microchip Technology, Raytheon Company, STMicroelectronics, Mitsubishi Electric Corporation, Panasonic Corporation, and NXP Semiconductor.
Market Segmentation
The RF GaN Semiconductor Device Market Growth segment study will help determine how each segment will impact market growth in the coming years. The research report also examines all market categories and sub-segments in order to determine the market's true potential.
RF GaN Semiconductor Device market Growth Segmentation
BY MATERIAL
- GaN-On-Silicon
- GaN-On-Sic
- GaN-On-Diamond
By END-USER
- IT & telecom
- Automotive
- Aerospace & defense
- Consumer electronics
- Others
By APPLICATION
- Wireless infrastructure
- Satellite communication
- Power storage
- PV inverted
- Others
RF GaN Semiconductor Device market Growth Segmentation, By Region
- North America [United States, Canada]
- Europe [Germany, France, U.K., Italy, Russia ]
- Asia-Pacific [China, Japan, South Korea, India, Australia, China Taiwan, Indonesia, Thailand, Malaysia]
- Latin America [Mexico, Brazil, Argentina]
- Middle East & Africa [Turkey, Saudi Arabia, UAE]
Key Highlights of the RF GaN Semiconductor Device Market Report
- Predictions of future trends that are accurate, as well as discernible shifts in consumer behavior
- In-depth analysis of the factors that will drive market growth in the coming years.
- COVID-19's impact on business operations and revenue generation in the target market.
- A detailed examination of the market's competitive landscape, as well as information on individual vendors
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Competitive Analysis
The analysis includes current company profiles, gross margins, selling price, sales income, sales volume, product specs with photographs, and contact information for each of the market's major competitors. A descriptive section in the report's conclusion highlights the feasibility of new projects that may succeed in the global market in the near future, as well as the overall scope of the global market in terms of investment feasibility in different segments of the RF GaN Semiconductor Device Market Growth.
Table of Content
1. Introduction
2. Research Methodology
3. Market Dynamics
4. Impact Analysis
5. Value Chain Analysis
6. Porter’s 5 Forces Model
7. PEST Analysis
Continued…
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Contact Us:
Akash Anand
Head of Business Development & Strategy
Phone: +44 20 8144 2758
RF GaN Semiconductor Device MarketMarket Research Future (MRFR), asserts in its recently published research report, that the Global RF GaN (Gallium Nitride) arket is projected to grow at 21.6% CAGR, witnessing considerable growth over the review period.
The market was assessed at USD 415.3 million in 2017 and is touted to reach USD 1295.5 million by 2023.Drivers and RestraintsThe past decade has exhibited significant growth in the RF GaN market, which has reshaped the RF power devices landscape.
moreover, innovation in linearization and power efficiency of RF power amplifiers will create opportunities for major market players during the forecast period.
Based on the application, the RF GaN market has been segmented into aerospace, IT and telecommunication, and military and defense.GaN Success or AdvantagesIt takes a suitably matched and configured driver to make sure that the switching device—GaN operates to its full qualifications and does not have unplanned issues.
More commonly, the role of this driver in the device is to be the electrical line among the lower-voltage digital output of the microprocessor-based controller or the same circuitry and the higher-voltage with high current, slew-rate demands of the power-switching device.With this, there is much more to the role of RF GaN device than this.
The need for the current high enough rate to swiftly charge the input capacitance of the device and to turn it on, yet it must quickly and crisply pull that charge from the gate input without ringing or overshoot.At most, the factors define the top-tier concerns of GaN devices and its advantages—The maximum gate voltage allowable is the gate threshold voltage and the body diode voltage drop.
RF GaN Semiconductor Device MarketThe sudden challenges created by the ongoing COVID-19 are captured effectively to exhibit the long term growth projections in the MRFR report on RF GaN Semiconductor Device Market.
The growth sectors of the RF GaN Semiconductor Device Market are identified with precision for a better growth perspective.According to Market Research Future, the global RF GaN semiconductor device market has been segmented based on material, application, end user, and region.The demand for RF amplifiers with a high rate of data transmission, higher frequency, and power has led to the development of GaN RF device technology.
Factors contributing to the growth of the global RF GaN market are increasing adoption of RF GaN power devices for energy & power applications and rise in demand for IT & telecommunication equipment that use RF GaN power devicesIn March 2018, Cree, Inc. announced the acquisition of Infineon Technologies’ AG radio frequency (rf) power business for approximately € 345 million.
The transaction would expand the Cree Wolfspeed business unit’s wireless market and also strengthen Wolfspeed’s leadership in RF GaN-on-SiC technology, as well as provides access to additional markets, customers, and packaging expertise.The global RF GaN semiconductor device market has been segmented based on sensor type, application, and region.Based on material type, the market has been segmented into GaN-On-SiC, GaN-On-Silicon, and GaN-On-Diamond.
The GaN-on-SiC segment holds the largest market share; it is expected to register the highest CAGR during the forecast period due to various benefits offered by it including high thermal conductivity, performance, reliability, and cut-off frequency which increases its adoption across different industry verticals.Based on applications the market has been segmented into wireless infrastructure, power storage, satellite communication, PV inverter, others.
The wireless segment led the market in 2018 due to the increasing requirement of devices with low power consumption and increasing overall efficiency in performance.Based on end user, the market has been segmented into aerospace & defense, IT & telecom, consumer electronics, automotive, and others.
