Market Highlights
Rapid development in electronics and semiconductor sectors has increased the need for transistors and integrated circuits (IC) in GaN semiconductor devices. Additionally, the GaN possess the characteristics such as low resistance which reduces the conductance dissipation, minimizes the switching losses, low power to drive the circuits and reduced size at printed circuit boards (PCB) which adds to the market of GaN semiconductor devices. Additionally, GaN provides greater stability in radioactive environment and exhibits a unique ability to control and produce electrons more than 1000 times of silicon (Si) is expected to be major advantages for the Covid-19 Impact on GaN Semiconductor Devices Market to grow over the forecast period.
Moreover, the GaN semiconductor device are bifurcated into type, wafer size, devices, and end user. By type, gallium nitride semiconductor devices is divided into opto semiconductor, power semiconductor, and RF semiconductors. Based on wafer size the gallium nitride semiconductor is further sub categorized into 2 inches, 4 inches, and 6 inches and above. Furthermore, device based gallium nitride semiconductor is subdivided into transistor, diode, rectifier, power ICs, power drivers, supply & inverter, amplifiers, lighting & laser, and switching systems. Lastly, the gallium nitride semiconductor devices are sub segmented into end user which include automotive, aerospace & defense, consumer electronics, telecommunication, and medical
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Regional Analysis
Geographically, the gallium nitride (GaN) semiconductor devices are categorized into four different regions such as North America, Asia Pacific, Europe, and Rest of the World.
North America is expected to be a prominent region in the GaN semiconductor devices market over forecast period. The U.S. and Canada are the leading countries in this region. This is attributed to large investment by the companies for innovation in semiconductor activities. Additionally, advancement of semiconductor power applications and enlarging the market base of GaN semiconductor are anticipated to drive the GaN semiconductor devices market over the review period 2017-2022.
Asia Pacific is expected to be the fastest growing region owing to, surging need for highly efficient RF components in consumer electronics and military applications. However, rapid increase in a large number of electronic component manufacturer are expected to propel the GaN semiconductor devices market over the review period 2017-2022.
Key Players
The key players of GaN Semiconductor Devices Market includes Fujitsu Ltd (Japan), Panasonic Semiconductors (Japan), Texas Instruments (U.S.),RF Micro Devices Corporation (U.S.), Osram Opto-semiconductors (Germany), Cree Incorporated (U.S.), Toshiba (Japan), Aixtron SE (Germany), Infineon Technologies (Germany), Gallia Semiconductor (Belgium), ROHM Company Limited (Japan), . NXP Semiconductors (U.S.), Koninklijke Philips N.V. (Netherlands), Nichia Corporation (Japan), and Qorvo (U.S.).
GaN Semiconductor Device Market - Segmentation
- Segmentation by type: Opto-semiconductor, power semiconductor.
- Segmentation by device: transistor, diode, rectifier, power IC’s, amplifier and switching system.
- Segmentation by application: Consumer Electronics, Automotive, Aerospace and Defence, Telecommunication, medical, power conditioner
- Segmentation by Region: North America, Europe, Asia Pacific, rest of the world.
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TABLE OF CONTENTS
1 Executive Summary
2 Scope Of The Report
2.1 Market Definition
2.2 Scope Of The Study
2.2.1 Research Objectives
2.2.2 Assumptions & Limitations
2.3 Markets Structure
3 Market Research Methodology
3.1 Research Process
3.2 Secondary Research
3.3 Primary Research
3.4 Forecast Model
4 Market Landscape
4.1 Porter’s Five Forces Analysis
4.1.1 Threat Of New Entrants
4.1.2 Bargaining Power Of Buyers
4.1.3 Threat Of Substitutes
4.1.4 Segment Rivalry
4.2 Value Chain/Supply Chain Of Global Gallium Nitride (GaN) Semiconductor Devices Market
5 Industry Overview Of Global Gallium Nitride (GaN) Semiconductor Devices Market
5.1 Introduction
5.2 Growth Drivers
5.3 Impact Analysis
5.4 Market Challenges
6 Market Trends
6.1 Introduction
6.2 Growth Trends
6.3 Impact Analysis
Continued…
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COVID-19 Impact Analysis on GaN & SiC Power Semiconductor Market report published by Value Market Research provides a detailed market analysis comprising market size, share, value, growth and trends for the period 2019-2027.
The report encompasses data regarding market share and recent developments by key players.
Moreover, this market report also covers regional and country markets in detail.The research report also covers the comprehensive profiles of the key players in the market and an in-depth view of the competitive landscape worldwide.
The major players in the GaN & SiC Power Semiconductor include Alpha and Omega Semiconductors, Diodes Incorporated, Fuji Electric Co., Ltd, Infineon Technologies AG, Microsemi Corporation, Mitsubishi Electric Corporation, Panasonic Corporation, Exagan S.A.S, Vincotech GmbH, STMicroelectronics N.V., NXP Semiconductors N.V., Cambridge Electronics, GaN Systems Inc., Avogy, Inc., and United Silicon Carbide Inc..
This section includes a holistic view of the competitive landscape that includes various strategic developments such as key mergers & acquisitions, future capacities, partnerships, financial overviews, collaborations, new product developments, new product launches, and other developments.Get more information on "Global GaN & SiC Power Semiconductor Research Report" by requesting FREE Sample Copy at https://www.valuemarketresearch.com/contact/gan-sic-power-semiconductor-market/download-sampleMarket SegmentationThe broad GaN & SiC Power Semiconductor has been sub-grouped into the Product, Application and Region.
The report studies these subsets with respect to the geographical segmentation.
