Emerging Next Generation Memory Technologies
Over the past few decades, dynamic random-access memory (DRAM) and NAND flash memory have dominated the memory and storage industry as the primary technologies for volatile memory and non-volatile solid-state storage, respectively. However, both technologies are facing significant scaling challenges that are limiting future performance and cost improvements. This has resulted in a renewed focus on developing "next-generation" non-volatile memory technologies that can serve as possible replacements for existing memory and storage solutions. Some of the most promising emerging non-volatile memory technologies include resistive random-access memory (RRAM), spin-transfer torque magnetic random-access memory (STT-MRAM), and phase-change memory (PCM).
Resistive Random-Access Memory (RRAM)
RRAM is one of the most promising emerging Next Generation Memory Technologies
. It uses a metal-insulator-metal structure to allow electric currents to switch the resistance state of the insulator layer to represent data. RRAM offers simple fabrication process compatibility with back-end-of-line CMOS logic, high scalability with cell dimensions of tens of nanometers, fast switching speed of less than 10 nanoseconds, and high endurance of up to 1 trillion write cycles. RRAM is being developed as a potential non-volatile memory option that could provide byte-addressability like DRAM but with better performance and lower power consumption than NAND flash. Some industry players are targeting RRAM to replace SRAM and DRAM in memory hierarchies, while others envision it for storage-class memory applications.
Spin-Transfer Torque Magnetic RAM (STT-MRAM)
STT-MRAM uses magnetic tunnel junctions with two magnetic layers separated by an oxide barrier to represent data as parallel or anti-parallel magnetization states. The data state can be written by passing a spin-polarized current through the magnetic tunnel junction to toggle the magnetic orientation of the free layer. STT-MRAM retains data without power and offers almost unlimited programming endurance. It provides fast read/write times below 10 nanoseconds and data retention for years without refresh. STT-MRAM leverages manufacturing technology similar to DRAM and flash and can serve as a non-volatile and high-performance byte-addressable alternative to existing memory types. Major vendors are developing STT-MRAM for enterprise storage cache replacements, main memory, and embedded applications.
Phase-Change Memory (PCM)
PCM uses the amorphous and crystalline states of chalcogenic materials like germanium-antimony-tellurium (GST) to represent binary data. The chalcogenide materials can be switched between the states by applying heat produced from the flow of electric currents. The amorphous state represents a reset bit (1), while the crystalline state is a set bit (0). PCM provides high scalability down to cell sizes of 20-50 nanometers, fast switching times below 50 nanoseconds, and good endurance above 1012 cycles. It could potentially replace both flash memory and DRAM main memory. Significant industry efforts are ongoing to improve programming power consumption and design 3D cell structures for high-density PCM. The technology is already being incorporated in some commercial solid-state drives.
Future Prospects and Conclusion
Emerging next generation memory technologies like RRAM, STT-MRAM, and PCM promise performance advantages over NAND flash and compete with the density, cost, and capability limitations facing traditional memory types. They are being developed for applications spanning storage, main memory, embedded and specialized memory niches. Overcoming engineering challenges around cell scalability, manufacturing variability, and end-to-end device design will be crucial to make these memories commercially viable. Memory vendors and major chip makers are heavily investing in all the memory types to bring products to market in the next 3-5 years. With an expected ten-fold growth in global semiconductor memory and storage demand by 2030, next-generation memories are poised to transform computing architectures and enable new applications and form factors.
Next-generation storage technology comprises technologically advanced data storage solutions and products to handle with increasing file sizes and an increased amount of unstructured data.
It manages large data securely and allows fast, secure, and reliable data recovery in a cost-effective manner.
According to the recent MRFR report, such factors include the massive growth of digital data volume, proliferated use of tablets, laptops, and smartphones, rising penetration of high-end cloud computing, growth of the IoT market, the ubiquity of output and input devices in each sector, need to manage, analyze, and store huge amount of data, technological advancements, and growing demand for advanced time-saving technologies such as internet of things, online shopping, smart technologies, and automated systems.
Get Free Sample Report @ https://www.marketresearchfuture.com/sample_request/1800Market SegmentationBy type, the global next-generation data storage technologies market is segmented into optical storage, software defined storage (SDS), hybrid storage arrays, cloud-based storage service, magnetic storage, all flash arrays, and others.
By memory, the next-generation data storage technologies market is segmented into hybrid memory, racetrack memory, 3D chip memory, phase change memory, atomic scale magnetic memory, and others.
By solution, the next-generation data storage technologies market is segmented into computing devices, cloud services, big data storage, enterprise data storage, and others.
In 2018, the global Next Generation Data Storage Technologies market size was million US$ and it is expected to reach million US$ by the end of 2025, with a CAGR of during 2019-2025.
This report focuses on the global Next Generation Data Storage Technologies status, future forecast, growth opportunity, key market and key players.
The study objectives are to present the Next Generation Data Storage Technologies development in United States, Europe and China.Report Sample includes:- Table of Contents- List of Tables & Figures- Charts- Research MethodologyGet FREE Sample of Next Generation Data Storage Technologies Market Report The key players covered in this studyDellIBMHewlett-Packard Development Company, L.P.Hitachi data systemsNetApp, Inc.HGST, Inc.VMware, Inc.EMC CorporationTintriNutanixSimpliVity CorporationSandisk corporationToshiba corporationQuantum CorporationMicron TechnologyAvago TechnologiesDroboMarket segment by Type, the product can be split into All-flash storage arraysHolographic data storageCloud based disaster recoveryHybrid arrayHeat Assisted Magnetic RecordingMarket segment by Application, split into Consumer electronicsIndustrial AutomationAutomotiveAerospaceDefenseOthersMarket segment by Regions/Countries, this report covers United StatesEuropeChinaJapanSoutheast AsiaIndiaCentral & South AmericaThe study objectives of this report are: To analyze global Next Generation Data Storage Technologies status, future forecast, growth opportunity, key market and key players.To present the Next Generation Data Storage Technologies development in United States, Europe and China.To strategically profile the key players and comprehensively analyze their development plan and strategies.To define, describe and forecast the market by product type, market and key regions.In this study, the years considered to estimate the market size of Next Generation Data Storage Technologies are as follows:History Year: 2014-2018Base Year: 2018Estimated Year: 2019Forecast Year 2019 to 2025 Get the Complete Report & TOC of Next Generation Data Storage Technologies Market CONTACT US:276 5th Avenue, New York , NY 10001,United StatesInternational: (+1) 646 781 7170Email: help@24marketreports.comFollow Us On linkedin :- https://www.linkedin.com/company/24-market-reports
The global next generation memory market is expected to reach USD 3.43 billion by 2020, according to a new study by Grand View Research, Inc. Increasing need for fast and economical storage solutions across diverse applications is estimated to drive market growth over the forecast period.
Next generation memory is used for various applications such as enterprise, industrial and automotive to store and manage information, which is expected to augment market growth over the next six years.Increasing use of next generation memory in mobile phones to enhance customer experience is expected to fuel market growth.
Increasing demand for wearable electronics and replacement of flash memory storage may provide new growth avenues to the next generation memory market.
Low environment stability and high design cost may act as a restraint to market growth over the forecast period.Request a Sample Copy of the Global Next Generation Memory Market Research Report @ www.grandviewresearch.com/industry-analysis/next-generation-memory-market/request/rs1 Further key findings from the report suggest:Non-volatile memory storage is expected to remain the key product segment over the forecast period; it accounted for over 90% of the market in 2013.
This technology is used for economical storage and fast processing of data and sustains the stored information even when the power is turned off.
Volatile memory storage is estimated to witness considerable growth over the forecast period.
