Gallium Nitride Semiconductor Device Market
A new market study, titled “Gallium Nitride Semiconductor Device Market ” has been featured on Market Research Future.
Market Research Future (MRFR), studied the impact of COVID crisis on the global RF GaN Semiconductor Device Market 2020 for the assessment period. As per MRFR study, the RF GaN semiconductor market is likely to touch USD 1,607.23 Mn on the conclusion of the forecast period 2019–2025. The RF GaN semiconductor market is likely to thrive at 20.3% CAGR across the assessment period.
The role of RF GaN semiconductor device in the wireless infrastructure for the development of cell phones, space and satellite communications, television broadcasting, radio, radar, MRI machines, and military communications can boost the expansion of the RF GaN market across the study period. In addition, the increase need for RF GaN devices in the production of IT & telecommunication equipment can driver for the expansion of the market across the globe in the forecast period.
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In addition, companies invested in development of innovations that offers various applications can support the expansion of the market across the review period. The introduction of wireless applications, such as VHF (very high frequency), S-band radar, UHF (ultra-high frequency) radar (1–1000 MHz), HF (high frequency), L-band radar, and avionics with the assistance of RF GaN semiconductor devices can bolster the market rise.
Market Segmentation
The world RF GaN Semiconductor Device Market segment study is based on Applications, Material, and End-User. The material based segment of the RF GaN semiconductor market are GaN-On-Diamond, GaN-On-Sic, and GaN-On-Silicon. The wide range of application of GaN-On-Silicon can gain considerable traction for the market across the assessment period.
The application based segments of the RF GaN semiconductor market are power storage, wireless infrastructure, satellite communication, and PV inverter among others. The wireless infrastructure segment can generate considerable revenue for the GaN semiconductor market.
The End-User based segment of the RF GaN semiconductor market are IT & telecom, automotive, consumer electronics, aerospace & defense among others
Detailed Regional Analysis
The rise in investment made by reputed tech companies in the developed regions of North America can cause the RF GaN semiconductor market to rise at a high pace across the assessment period. MRFR study shows that the US is expected to head the regional market. The presence of some of the largest multinational corporations in the region that include Analog Devices Inc., Raytheon Company, and Cree, Inc. can prompt the expansion of the regional market. In Europe, the driver for the RF GaN market are similar. In addition, the high utility of RF GaN semiconductor by potential end-users, consumer electronics, military & defense, and IT & telecom among others are likely to bolster Europe RF GaN semiconductor market in the years to come. UIn APAC, the rise in the investment by telecom companies to establish viable infrastructure for 5G technology can prompt the expansion of the RF GaN market across the assessment period.
Key Players
MRFR registered some reputed players operating in the RF GaN Semiconductor Device global Market. They are; Robert Bosch GmbH (Germany), Raytheon Company (US), Sumitomo Electric Industries, Ltd (Japan), Toshiba Corporation (Japan), Hitachi, Ltd (Japan), STMicroelectronics (France), Renesas Electronics Corporation (Japan), Infineon Technologies AG (Germany), Panasonic Corporation (Japan), Microchip Technology (US), Mitsubishi Electric Corporation (Japan), Cree, Inc. (US), NXP Semiconductor (Netherlands), ROHM Semiconductors (Japan), Qorvo Inc. (US), Aethercomm Inc.(US), and Analog Devices Inc.(US) among others.
Related Article@ https://www.openpr.com/news/2089953/rf-gan-semiconductor-device-market-report-perceives-a-fabulous
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The gallium nitride semiconductor device market is expected to reach USD 22.47 Billion by 2023at a CAGR of 4.6% during the forecast period.
The major factors that are expected to be driving the market are the vast addressable market for gallium nitride in consumer electronics and automotive, wide bandgap property of gallium nitride material encouraging innovative applications, success of gallium nitride in RF power electronics, and increasing adoption of gallium nitride RF semiconductor device in military, defense, and aerospace application.
The use of RF power devices in avionics and radar systems is fueling the demand for GaN RF semiconductor devices in military, defense, and aerospace applications across the globe.
In March 2015, M/A-COM Technology Solutions Inc. launched a 650 W GaN on silicon carbide high-electron-mobility-transistor (HEMT) for L-band pulsed avionics applications.
In September 2015, the company launched 3 new highly reliable and compact GaN RF transistors in plastic packages for use in civilian marine, airborne, and infrastructure radar systems.
Request Free Sample Pages:https://www.marketsandmarkets.com/requestsampleNew.asp?id=698 The key players in this industry are Cree (US), Samsung (South Korea), Infineon (Germany), Qorvo (US), MACOM (US), Microsemi Corporation (US), Analog Devices (US), Mitsubishi Electric (Japan), Efficient Power Conversion (US), GaN Systems (Canada), Exagan (France) , VisIC Technologies (Israel), Integra Technologies (US), Transphorm (US), Navitas Semiconductor (US), Nichia (Japan), Panasonic (Japan), Texas Instruments (US), Ampleon (Netherlands), Sumitomo Electric (Japan), Northrop Grumman Corporation (US), Dialog Semiconductor (UK), and Epistar (Taiwan).
The gallium nitride semiconductor device market is expected to reach USD 22.47 Billion by 2023 at a CAGR of 4.6% during the forecast period.Increasing adoption of GaN RF semiconductor devices in military, defense, and aerospace applicationsIncreased use of RF power in military, defense, and aerospace applications acts as a driver for the growth of the gallium nitride semiconductor device market.
The use of RF power devices in avionics and radar systems is fueling the demand for GaN RF semiconductor devices in military, defense, and aerospace applications across the globe.
In March 2015, M/A-COM Technology Solutions Inc. launched a 650 W GaN on silicon carbide high-electron-mobility-transistor (HEMT) for L-band pulsed avionics applications.
In May 2015, Qorvo, Inc. launched a series of GaN power amplifiers with improved efficiency, gain, and power performance for military satellite and commercial VSAT applications.
In September 2015, the company launched 3 new highly reliable and compact GaN RF transistors in plastic packages for use in civilian marine, airborne, and infrastructure radar systems.
Download PDF Brochure:https://www.marketsandmarkets.com/pdfdownloadNew.asp?id=698 Growing competition from SiC in high-voltage semiconductor applicationsSilicon carbide (Sic) power semiconductor devices, since their launch at the commercial level in 2001, have been trying to penetrate the power semiconductor device market globally by replacing pure silicon.
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