Gallium Nitride Semiconductor Device Market Size, Scope And Forecast | Top Key Company Profiles- Microsemi, Mitsubishi Electric Corporation, SAMSUNG, Analog Devices, Inc., Panasonic Corporation

GaN Semiconductors Market: Overview

GaN (Gallium Nitride) Semiconductor is most commonly used in LEDs (Light Emitting Diodes). It is a III/V direct band-gap semiconductor having a Wurtzite Crystal structure. Some other applications include, high frequency and high power devices, and optoelectronic devices.

Research Report Insights (RRI) pegs the growth opportunity of the global GaN semiconductor devices at US$3,438.4 mn by 2024. The market, which had a valuation of US$870.9 mn in 2015, is expected to exhibit an exponential CAGR of 17.0% over the period between 2016 and 2024 to achieve this feat.

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 GaN Semiconductors Market: Segmentation

On the basis of Wafer Size, the global GaN Semiconductors market can be segmented as follows,

• 2 inch
• 4 inch
• 6 inch
• 8 inch

The global GaN Semiconductors market can also be segmented by Products,

• Power Semiconductors
• GaN Radio Frequency Devices
• Opto-semiconductors

With regards to the application, the global GaN Semiconductors market is segmented as,

• Information and Communication Technology
• Automotive
• Consumer Electronics
• Defense and Aerospace
• Others

GaN Semiconductors Market: Drivers

The accelerated demand from consumers for energy efficient power electronics is expected to act as a driving factor for the global GaN Semiconductors market. Gallium Nitride Semiconductors have dynamic chemical and electrical properties, such as high saturation velocity and voltage breakdown that enable such semiconductors to be the appropriate choice for utilization in various switching devices. As compared to the silicon technology semiconductors, GaN Semiconductors provide other benefits, such as higher power density, thermal conductivity and temperature tolerance, thus propelling the global GaN Semiconductors market.

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GaN Semiconductors Market: Regional Outlook

The global Automotive Steering System market is segmented into the following regions – North America, Latin America, Europe, APAC, and Middle East and Africa. The GaN Semiconductors market in APAC is expected to register the most lucrative growth over the forecast period owing to the increasing demand for high performance and energy efficient radio frequency components.

Currently, North America is the largest contributor in the global GaN Semiconductors market.

GaN Semiconductors Market Key Players: Efficient Power Conversion Corporation, NXP Semiconductors N.V., GaN Systems Inc., and Cree Inc. are these top four companies in the market. Other key vendors in the market are Mersen S.A., Avogy, Inc., Fujitsu Limited, Toshiba Corporation, and Renesas Electronics Corporation.

Research Methodology:

RRI surveys a number of companies in order to estimate the data covered in the report through triangulation methodology. A detailed market understanding and assessment of the drive and application segments covered in the study. The research methodology also includes interviews conducted for various industry leaders by the research experts. This helps the researchers to match their previous findings with the ones confirmed from various resource persons. The report focuses on analyzing the supply-side approaches and keeps a track of that of the demand-side so as to make sure the findings are true. The global market scenario has been derived by consolidation of regional market overviews.

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RF GaN Semiconductor Device Market SizeA well-known Market research forum—the Market Research Future has come up with its latest reports on global RF GaN Semiconductor Device Market saying that it is estimated that the market is ready to reach USD 1,607.23 Million by 2025 while growing at a CAGR of 20.3% in the forecast period of 2019–2025.What is RF GaN Semiconductor Device?Over the last decade, Gallium Nitride (GaN) has flaunted the technology as the future for high power cellular base stations that will displace silicon LDMOS devices.About GaN—Gallium nitride—GaN is a material that is generally used in the production of semiconductor power devices as well as RF components and light-emitting diodes (LEDs).

GaN has labeled with the capability to become the displacement technology for silicon semiconductors, mainly in power conversion, RF, and analog applications.Seeing as the dawn of the electronics age since a hundred years ago, power design engineers have been on an expedition for the ideal switch that will rapidly and efficiently convert raw electrical energy into a controlled and useful flow of electrons.GaN ascension to the forefront of the RF semiconductor industry comes at a crucial moment in the evolution of commercial wireless infrastructure.

It is proven performance leadership over LDMOS technology that is driving its adoption within the newest generation of 4G LTE base stations.Looking further, GaN-based RF technologies also have the potential to succeed in the antiquated magnetron and spark plug technologies to release the full value of commercial solid-state RF energy.GaN Success or AdvantagesIt takes a suitably matched and configured driver to make sure that the switching device—GaN operates to its full qualifications and does not have unplanned issues.

More commonly, the role of this driver in the device is to be the electrical line among the lower-voltage digital output of the microprocessor-based controller or the same circuitry and the higher-voltage with high current, slew-rate demands of the power-switching device.With this, there is much more to the role of RF GaN device than this.

The need for the current high enough rate to swiftly charge the input capacitance of the device and to turn it on, yet it must quickly and crisply pull that charge from the gate input without ringing or overshoot.At most, the factors define the top-tier concerns of GaN devices and its advantages—The maximum gate voltage allowable is the gate threshold voltage and the body diode voltage drop.

The gate-source voltage for an improved GaN device is 6V, and this simplifies the challenge of generating the needed turn-on and turn-off voltages and electric.

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